MMG3013NT1_08 Datasheet, PDF (1/15 Pages) Freescale Semiconductor, Inc – Heterojunction Bipolar Transistor Technology (InGaP HBT)

Freescale Semiconductor
Technical Data
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
Broadband High Linearity Amplifier
The MMG3013NT1 is a General Purpose Amplifier that is internally
input matched and internally output matched. It is designed for a broad
range of Class A, small - signal, high linearity, general purpose applica-
tions. It is suitable for applications with frequencies from 0 to 6000 MHz
such as Cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and
general small - signal RF.
Features
• Frequency: 0 - 6000 MHz
• P1dB: 20.5 dBm @ 900 MHz
• Small - Signal Gain: 20 dB @ 900 MHz
• Third Order Output Intercept Point: 36 dBm @ 900 MHz
• Single 5 Volt Supply
• Internally Matched to 50 Ohms
• Low Cost SOT - 89 Surface Mount Package
• RoHS Compliant
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
Document Number: MMG3013NT1
Rev. 6, 3/2008
MMG3013NT1
0 - 6000 MHz, 20 dB
20.5 dBm
InGaP HBT
12 ₃
CASE 1514 - 02, STYLE 1
SOT - 89
PLASTIC
Table 1. Typical Performance ⁽¹⁾
Characteristic
Symbol 900 2140 3500 Unit
MHz MHz MHz
Small - Signal Gain
(S21)
G_p
20 17 14.5 dB
Input Return Loss
(S11)
IRL - 17 - 19 - 15 dB
Output Return Loss
(S22)
ORL
- 11 - 9
- 12 dB
Power Output @1dB P1db
Compression
20.5 20.5
19 dBm
Third Order Output
Intercept Point
IP3
36 34
1. V_CC = 5 Vdc, T_C = 25°C, 50 ohm system
32 dBm
Table 2. Maximum Ratings
Rating
Symbol Value
Unit
Supply Voltage
V_CC
7
V
Supply Current
I_CC
300
mA
RF Input Power
P_in
12
dBm
Storage Temperature Range
T_stg - 65 to +150 °C
Junction Temperature ⁽²⁾
T_J
150
°C
2. For reliable operation, the junction temperature should not
exceed 150°C.
Table 3. Thermal Characteristics (V_CC = 5 Vdc, I_CC = 90 mA, T_C = 25°C)
Characteristic
Symbol
Value ⁽³⁾
Thermal Resistance, Junction to Case
R_θJC
42
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
°C/W
© Freescale Semiconductor, Inc., 2005-2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MMG3013NT1
1