MMG3012NT1_08 Datasheet, PDF (1/15 Pages) Freescale Semiconductor, Inc – Heterojunction Bipolar Transistor Technology (InGaP HBT)

Freescale Semiconductor
Technical Data
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
Broadband High Linearity Amplifier
The MMG3012NT1 is a General Purpose Amplifier that is internally
input matched and internally output matched. It is designed for a broad
range of Class A, small - signal, high linearity, general purpose applica-
tions. It is suitable for applications with frequencies from 0 to 6000 MHz
such as Cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and
general small - signal RF.
Features
• Frequency: 0 - 6000 MHz
• P1dB: 18.5 dBm @ 900 MHz
• Small - Signal Gain: 19 dB @ 900 MHz
• Third Order Output Intercept Point: 34 dBm @ 900 MHz
• Single 5 Volt Supply
• Internally Matched to 50 Ohms
• Low Cost SOT - 89 Surface Mount Package
• RoHS Compliant
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
Document Number: MMG3012NT1
Rev. 5, 3/2008
MMG3012NT1
0 - 6000 MHz, 19 dB
18.5 dBM
InGaP HBT
12 ₃
CASE 1514 - 02, STYLE 1
SOT - 89
PLASTIC
Table 1. Typical Performance ⁽¹⁾
Characteristic
Symbol 900 2140 3500 Unit
MHz MHz MHz
Small - Signal Gain
(S21)
G_p
19 15.8 13.4 dB
Input Return Loss
(S11)
IRL - 18 - 20 - 17 dB
Output Return Loss
(S22)
ORL
- 18 - 12 - 16 dB
Power Output @1dB P1db 18.5 19
Compression
18 dBm
Third Order Output
Intercept Point
IP3
34 32
1. V_CC = 5 Vdc, T_C = 25°C, 50 ohm system
31 dBm
Table 2. Maximum Ratings
Rating
Symbol Value
Unit
Supply Voltage
V_CC
7
V
Supply Current
I_CC
300
mA
RF Input Power
P_in
10
dBm
Storage Temperature Range
T_stg - 65 to +150 °C
Junction Temperature ⁽²⁾
T_J
150
°C
2. For reliable operation, the junction temperature should not
exceed 150°C.
Table 3. Thermal Characteristics (V_CC = 5 Vdc, I_CC = 70 mA, T_C = 25°C)
Characteristic
Symbol
Value ⁽³⁾
Thermal Resistance, Junction to Case
R_θJC
85
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
°C/W
© Freescale Semiconductor, Inc., 2005-2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MMG3012NT1
1