MMG3007NT1 Datasheet, PDF (1/12 Pages) Freescale Semiconductor, Inc – Heterojunction Bipolar Transistor(InGaP HBT)

Freescale Semiconductor
Technical Data
Heterojunction Bipolar Transistor
(InGaP HBT)
Broadband High Linearity Amplifier
The MMG3007NT1 is a General Purpose Amplifier that is internally
input and output matched. It is designed for a broad range of Class A,
small - signal, high linearity, general purpose applications. It is suitable
for applications with frequencies from 0 to 6000 MHz such as Cellular,
P C S , B WA , W L L , P H S , C AT V, V H F, U H F, U MT S a n d g e n e ra l
small-signal RF.
Features
• Frequency: 0 to 6000 MHz
• P1dB: 16 dBm @ 900 MHz
• Small-Signal Gain: 19 dB @ 900 MHz
• Third Order Output Intercept Point: 30 dBm @ 900 MHz
• Single 5 Volt Supply
• Internally Matched to 50 Ohms
• Low Cost SOT -89 Surface Mount Package
• Pb -Free and RoHS Compliant
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
Document Number: MMG3007NT1
Rev. 1, 8/2005
MMG3007NT1
0 -6000 MHz, 19 dB
16 dBm
InGaP HBT
12 ₃
CASE 1514-01, STYLE 1
SOT - 89
PLASTIC
Table 1. Typical Performance ⁽¹⁾
Characteristic
Symbol 900 2140 3500 Unit
MHz MHz MHz
Small-Signal Gain
(S21)
G_p
19 16.5 14 dB
Input Return Loss
(S11)
IRL -14 -21 -21 dB
Output Return Loss
(S22)
ORL -20 -17 -25 dB
Power Output @1dB
Compression
P1db
16 15.5 16 dBm
Third Order Output
Intercept Point
IP3
30 29 28.5 dBm
1. V_CC = 5 Vdc, T_C = 25°C, 50 ohm system
Table 2. Maximum Ratings
Rating
Symbol Value
Unit
Supply Voltage ⁽²⁾
V_CC
7
V
Supply Current ⁽²⁾
I_CC
250
mA
RF Input Power
P_in
10
dBm
Storage Temperature Range
T_stg -65 to +150 °C
Junction Temperature ⁽³⁾
T_J
150
°C
2. Continuous voltage and current applied to device.
3. For reliable operation, the junction temperature should not
exceed 150°C.
Table 3. Thermal Characteristics (V_CC = 5 Vdc, I_CC = 47 mA, T_C = 25°C)
Characteristic
Symbol
Value ⁽⁴⁾
Thermal Resistance, Junction to Case
R_θJC
77
4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
°C/W
 Freescale Semiconductor, Inc., 2005. All rights reserved.
RF Device Data
Freescale Semiconductor
MMG3007NT1
1