MMG3005NT1 Datasheet, PDF (1/20 Pages) Freescale Semiconductor, Inc – Heterojunction Bipolar Transistor Technology (InGaP HBT)

Freescale Semiconductor
Technical Data
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
Broadband High Linearity Amplifier
The MMG3005NT1 is a General Purpose Amplifier that is internally
prematched and designed for a broad range of Class A, small -signal, high
linearity, general purpose applications. It is suitable for applications with
frequencies from 800 to 2200 MHz such as Cellular, PCS, WLL, PHS,
VHF, UHF, UMTS and general small -signal RF.
Features
• Frequency: 800 -2200 MHz
• P1dB: 30 dBm @ 2140 MHz
• Small-Signal Gain: 15 dB @ 2140 MHz
• Third Order Output Intercept Point: 47 dBm @ 2140 MHz
• Single 5 Volt Supply
• Internally Prematched to 50 Ohms
• Pb -Free Leads. RoHS Compliant.
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
Document Number: MMG3005NT1
Rev. 1, 11/2005
MMG3005NT1
800 -2200 MHz, 15 dB
30 dBm
InGaP HBT
CASE 1543-02
PQFN 5x5
PLASTIC
Table 1. Typical Performance ⁽¹⁾
Characteristic
Symbol 900 1960 2140 Unit
MHz MHz MHz
Small-Signal Gain
(S21)
G_p
18.5 15.5 15 dB
Input Return Loss
(S11)
IRL -14 -10 -11 dB
Output Return Loss
(S22)
ORL -12 -7
-7 dB
Power Output @1dB P1db 30 30 30 dBm
Compression
Third Order Output
Intercept Point
IP3
47 47
1. V_DC = 5 Vdc, T_C = 25°C, 50 ohm system
47 dBm
Table 2. Maximum Ratings
Rating
Symbol Value
Unit
Supply Voltage ⁽²⁾
Supply Current ⁽²⁾
V_DC
6
V
I_DC
600
mA
RF Input Power
P_in
18
dBm
Storage Temperature Range
T_stg -65 to +150 °C
Junction Temperature ⁽³⁾
T_J
150
°C
2. Continuous voltage and current applied to device.
3. For reliable operation, the junction temperature should not
exceed 150°C.
Table 3. Thermal Characteristics (V_DC = 5 Vdc, I_DC = 480 mA, T_C = 25°C)
Characteristic
Symbol
Value ⁽⁴⁾
Thermal Resistance, Junction to Case
R_θJC
21.5
4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
°C/W
 Freescale Semiconductor, Inc., 2005. All rights reserved.
RF Device Data
Freescale Semiconductor
MMG3005NT1
1