MMG20271HT1 Datasheet, PDF (1/18 Pages) Freescale Semiconductor, Inc – Enhancement Mode pHEMT Technology (E-pHEMT) High Linearity Amplifier

Freescale Semiconductor
Technical Data
Enhancement Mode pHEMT
Technology (E--pHEMT)
High Linearity Amplifier
The MMG20271H is a high dynamic range, low noise amplifier MMIC, housed
in a QFN 3x3 standard plastic package. It is ideal for Cellular, PCS, LTE,
TD--SCDMA, W--CDMA base station, wireless LAN and other systems in the
1500 to 2700 MHz frequency range. With high OIP3 and low noise figure, it can
be utilized as a driver amplifier in the transmit chain and as a second stage LNA
in the receive chain.
Features
• Frequency: 1500--2700 MHz
• Noise Figure: 1.7 dB @ 2140 MHz
• P1dB: 27.5 dBm @ 2140 MHz
• Small--Signal Gain: 16 dB @ 2140 MHz
• Third Order Output Intercept Point: 42 dBm @ 2140 MHz
• Single 5 Volt Supply
• Supply Current: 180 mA
• 50 Ohm Operation (some external matching required)
• Low Cost QFN Surface Mount Package
• RoHS Compliant
• In Tape and Reel. T1 Suffix = 1000 Units, 12 mm Tape Width, 7 inch Reel.
Document Number: MMG20271H
Rev. 0, 12/2010
MMG20271HT1
1500--2700 MHz, 16 dB
27.5 dBm
E--pHEMT
CASE 2131--01
QFN 3x3
PLASTIC
Table 1. Typical Performance ⁽¹⁾
Characteristic
1500 2140 2700
Symbol MHz MHz MHz Unit
Noise Figure
NF
2.0 1.7 1.9 dB
Input Return Loss
(S11)
IRL --16 --14 --17 dB
Output Return Loss
(S22)
ORL --20 --22 --17 dB
Small--Signal Gain
(S21)
G_p
18 16 14 dB
Power Output @
1dB Compression
P1db
27 27.5 28 dBm
Third Order Input
Intercept Point
IIP3
22 26
28 dBm
Third Order Output
Intercept Point
OIP3 40 42 42 dBm
1. V_DD = 5 Vdc, T_A = 25°C, 50 ohm system, application circuit tuned
for specified frequency.
Table 2. Maximum Ratings
Rating
Symbol Value
Unit
Supply Voltage
V_DD
6
V
Supply Current
I_DD
400
mA
RF Input Power
P_in
25
dBm
Storage Temperature Range
T_stg --65 to +150 °C
Junction Temperature ⁽²⁾
T_J
150
°C
2. For reliable operation, the junction temperature should not
exceed 150°C.
Table 3. Thermal Characteristics
Characteristic
Symbol
Value ⁽³⁾
Thermal Resistance, Junction to Case
Case Temperature 96°C, 5 Vdc, 190 mA, no RF applied
R_θJC
38
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Unit
°C/W
© Freescale Semiconductor, Inc., 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MMG20271HT1
1