MMG15241HT1 Datasheet, PDF (1/18 Pages) Freescale Semiconductor, Inc – Enhancement Mode pHEMT Technology (E-pHEMT)

Freescale Semiconductor
Technical Data
Enhancement Mode pHEMT
Technology (E--pHEMT)
High Linearity Amplifier
The MMG15241H is a high dynamic range, low noise amplifier MMIC, housed
in a SOT -- 89 standard plastic package. It is ideal for Cellular, PCS, LTE,
TD--SCDMA, W--CDMA base station, wireless LAN and other systems in the
500 to 2800 MHz frequency range. With high OIP3 and low noise figure, it can
be utilized as a driver amplifier in the transmit chain and as a second stage LNA
in the receive chain.
Features
• Frequency: 500--2800 MHz
• Noise Figure: 1.6 dB @ 2140 MHz
• P1dB: 24 dBm @ 2140 MHz
• Small--Signal Gain: 15.9 dB @ 2140 MHz
• Third Order Output Intercept Point: 39.4 dBm @ 2140 MHz
• Single 5 Volt Supply
• Supply Current: 85 mA
• 50 Ohm Operation (some external matching required)
• Low Cost SOT--89 Surface Mount Package
• RoHS Compliant
• In Tape and Reel. T1 Suffix = 1000 Units, 12 mm Tape Width, 7 inch Reel.
Document Number: MMG15241H
Rev. 0, 12/2010
MMG15241HT1
500--2800 MHz, 15.9 dB
24 dBm
E--pHEMT
CASE 2142--01
SOT--89A
PLASTIC
Table 1. Typical Performance ⁽¹⁾
Characteristic
900 2140 2600
Symbol MHz MHz MHz Unit
Noise Figure
NF
1.2 1.6 1.3 dB
Input Return Loss
(S11)
IRL --11.8 --21.3 --16.9 dB
Output Return Loss
(S22)
ORL --13.4 --16.2 --20.9 dB
Small--Signal Gain
(S21)
G_p
20.5 15.9 14.4 dB
Power Output @
P1db 24 24 24 dBm
1dB Compression
Third Order Input
Intercept Point
IIP3 18.2 23.5 26.2 dBm
Third Order Output
Intercept Point
OIP3 38.7 39.4 40.6 dBm
1. V_DD = 5 Vdc, T_A = 25°C, 50 ohm system, application circuit tuned
for specified frequency.
Table 2. Maximum Ratings
Rating
Symbol Value
Unit
Supply Voltage
V_DD
6
V
Supply Current
I_DD
130
mA
RF Input Power
P_in
13
dBm
Storage Temperature Range
T_stg --65 to +150 °C
Junction Temperature ⁽²⁾
T_J
150
°C
2. For reliable operation, the junction temperature should not
exceed 150°C.
Table 3. Thermal Characteristics
Characteristic
Symbol
Value ⁽³⁾
Thermal Resistance, Junction to Case
Case Temperature 85°C, 5 Vdc, 84 mA, no RF applied
R_θJC
59
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Unit
°C/W
© Freescale Semiconductor, Inc., 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MMG15241HT1
1