MHV5IC1810NR2 Datasheet, PDF (1/16 Pages) Freescale Semiconductor, Inc – RF LDMOS Wideband Integrated Power Amplifier

Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifier
The MHV5IC1810N wideband integrated circuit is designed with on - chip
matching that makes it usable from 1805 to 1990 MHz. This multi - stage
structure is rated for 24 to 32 Volt operation and covers all typical cellular base
station modulation formats.
Final Application
• Typical Two - Tone Performance: V_DD = 28 Volts, I_DQ1 = 120 mA, I_DQ2 =
90 mA, P_out = 5 Watts Avg., Full Frequency Band (1805 - 1880 MHz or
1930 - 1990 MHz)
Power Gain — 29 dB
Power Added Efficiency — 29%
IMD — - 34 dBc
Driver Application
• Typical GSM EDGE Performance: V_DD = 28 Volts, I_DQ1 = 105 mA, I_DQ2 =
95 mA, P_out = 35 dBm, Full Frequency Band (1805 - 1880 MHz or
1930 - 1990 MHz)
Power Gain — 29 dB
Spectral Regrowth @ 400 kHz Offset = - 67 dBc
Spectral Regrowth @ 600 kHz Offset = - 76 dBc
EVM — 1.1% rms
• Capable of Handling 3:1 VSWR, @ 28 Vdc, 1990 MHz, 10 Watts CW
Output Power
• Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to 10 W CW
P_out.
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
and Common Source Scattering Parameters
• On - Chip Matching (50 Ohm Input, >5 Ohm Output)
• Integrated Quiescent Current Temperature Compensation
with Enable/Disable Function
• On - Chip Current Mirror g_m Reference FET for Self Biasing Application ⁽¹⁾
• Integrated ESD Protection
• RoHS Compliant
• In Tape and Reel. R2 Suffix = 1500 Units per 16 mm, 13 inch Reel.
Document Number: MHV5IC1810N
Rev. 0, 5/2006
MHV5IC1810NR2
1805 - 1990 MHz, 5 W AVG., 28 V
GSM/GSM EDGE
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIER
16
1
CASE 978 - 03
PFP - 16
PLASTIC
V_RD1
V_RG1
V_DS1
RF_in
V_GS1
V_GS2
2 Stage IC
Quiescent Current
Temperature Compensation
Figure 1. Functional Block Diagram
V_DS2/RF_out
NC 1
V_RD1 2
V_RG1 3
V_DS1 4
GND 5
RF_in 6
V_GS1 7
V_GS2 8
16 NC
15 V_DS2/RF_out
14 VDS2/RFout
13 V_DS2/RF_out
12 V_DS2/RF_out
11 VDS2/RFout
10 V_DS2/RF_out
9 NC
(Top View)
Note: Exposed backside flag is source
terminal for transistors.
Figure 2. Pin Connections
1. Refer to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1987.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MHV5IC1810NR2
1