MHPA19010N Datasheet, PDF (1/8 Pages) Freescale Semiconductor, Inc – PCS Band RF Linear LDMOS Amplifier

Freescale Semiconductor
Technical Data
PCS Band
RF Linear LDMOS Amplifier
Designed for Class AB amplifier applications in 50 ohm systems operating in
the PCS frequency band. A silicon FET design provides outstanding linearity
and gain. In addition, the excellent group delay and phase linearity characteris-
tics are ideal for digital modulation systems, such as TDMA and CDMA.
• Typical CDMA Performance: 1960 MHz, 28 Volts
IS - 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
• Adjacent Channel Power: - 51 dBc @ 30 dBm, 885 kHz Channel Spacing
• Power Gain: 24.5 dB Min (@ f = 1960 MHz)
• 0.2 dB Typical Gain Flatness
Features
• Excellent Phase Linearity and Group Delay Characteristics
• Ideal for Feedforward Base Station Applications
• N Suffix Indicates Lead - Free Terminations
Document Number: MHPA19010N
Rev. 6, 5/2006
MHPA19010N
1930- 1990 MHz
10 W, 24.5 dB
RF HIGH POWER LDMOS AMPLIFIER
CASE 301AP - 02, STYLE 3
Table 1. Maximum Ratings (T_C = 25°C unless otherwise noted)
Rating
DC Supply Voltage
RF Input Power (Single Carrier CW)
Storage Temperature Range
Operating Case Temperature Range
Quiescent Bias Current
Symbol
V_DD
P_in
T_stg
T_C
I_DQ
Value
30
+20
- 40 to +100
- 20 to +100
750
Unit
Vdc
dBm
°C
°C
mA
Table 2. Electrical Characteristics (V_DD = 28 Vdc, V_BIAS ≅ 8 V Set for Supply Current of 600 mA, T_C = 25°C, 50 Ω System)
Characteristic
Symbol
Min
Typ
Max
Unit
Supply Current
Power Gain
Gain Flatness
Power Output @ 1 dB Comp.
(f = 1960 MHz)
(f = 1930 - 1990 MHz)
(f = 1960 MHz)
I_DD
G_p
G_F
P1dB
—
600
—
24.5
25
—
—
0.2
0.5
—
41.5
—
mA
dB
dB
dBm
Input VSWR
Noise Figure
(f = 1930 - 1990 MHz)
VSWR_in
—
1.5:1
2:1
(f = 1960 MHz)
NF
—
8
10
dB
Adjacent Channel Power Rejection @ 30 dBm, 1.23 MHz BW,
885 kHz Channel Spacing
ACPR
—
- 58
- 51
dBc
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MHPA19010N
1