MHPA18010N Datasheet, PDF (1/4 Pages) Freescale Semiconductor, Inc – CDMA Band RF Linear LDMOS Amplifier

Freescale Semiconductor
Technical Data
CDMA Band
RF Linear LDMOS Amplifier
Designed for Class AB amplifier applications in 50 ohm systems operating in
the 1800 to 1900 MHz frequency band. A silicon FET design provides
outstanding linearity and gain. In addition, the excellent group delay and phase
linearity characteristics are ideal for digital CDMA and GSM modulation
systems.
• Typical CDMA Performance: 1840 MHz, 28 Volts
IS - 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
• Adjacent Channel Power: - 51 dBc @ 30 dBm Average Power,
885 kHz Channel Spacing
• Power Gain: 24.5 dB Min (@ f = 1840 MHz)
Features
• Excellent Phase Linearity and Group Delay Characteristics
• Ideal for Feedforward Base Station Applications
• N Suffix Indicates Lead - Free Terminations
Document Number: MHPA18010N
Rev. 4, 5/2006
MHPA18010N
1805- 1880 MHz
10 W, 24.5 dB
RF HIGH POWER LDMOS AMPLIFIER
CASE 301AP - 02, STYLE 3
Table 1. Maximum Ratings (T_C = 25°C unless otherwise noted)
Rating
DC Supply Voltage
RF Input Power (Single Carrier CW)
Storage Temperature Range
Operating Case Temperature Range
Symbol
V_DD
P_in
T_stg
T_C
Value
30
+20
- 40 to +100
- 20 to +100
Unit
Vdc
dBm
°C
°C
Table 2. Electrical Characteristics (V_DD = 28 Vdc, V_BIAS ≅ 8 V Set for Supply Current of 600 mA, T_C = 25°C, 50 Ω System)
Characteristic
Symbol
Min
Typ
Max
Unit
Supply Current
Power Gain
Gain Flatness
Power Output @ 1 dB Comp.
(f = 1840 MHz)
(f = 1805 - 1880 MHz)
(f = 1840 MHz)
I_DD
G_p
G_F
P1dB
—
600
—
24.5 25.5
—
—
0.2
0.5
—
41.5
—
mA
dB
dB
dBm
Input VSWR
Noise Figure
(f = 1805 - 1880 MHz)
VSWR_in
—
1.5:1
2:1
(f = 1840 MHz)
NF
—
8
10
dB
Adjacent Channel Power Rejection @ 30 dBm Average Power,
1.23 MHz BW, 885 kHz Channel Spacing
ACPR
—
- 58
- 51
dBc
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MHPA18010N
1