MHL9236N Datasheet, PDF (1/5 Pages) Freescale Semiconductor, Inc – Cellular Band RF Linear LDMOS Amplifier

Freescale Semiconductor
Technical Data
Cellular Band
RF Linear LDMOS Amplifier
Designed for ultra - linear amplifier applications in 50 ohm systems operating in
the cellular frequency band. A silicon FET Class A design provides outstanding
linearity and gain. In addition, the excellent group delay and phase linearity
characteristics are ideal for the most demanding analog or digital modulation
systems, such as TDMA, CDMA or QPSK.
• Third Order Intercept: 47 dBm Typ
• Power Gain: 30.5 dB Typ (@ f = 880 MHz)
• Input and Output VSWR v 1.5:1
Features
• Excellent Phase Linearity and Group Delay Characteristics
• Ideal for Feedforward Base Station Applications
• For Use in TDMA, CDMA, QPSK or Analog Systems
• N Suffix Indicates Lead - Free Terminations
Document Number: MHL9236N
Rev. 8, 8/2006
MHL9236N
800 - 960 MHz
2.5 W, 30.5 dB
RF LINEAR LDMOS AMPLIFIER
CASE 301AP - 02, STYLE 1
Table 1. Absolute Maximum Ratings (T_C = 25°C unless otherwise noted)
Rating
Symbol
DC Supply Voltage
V_DD
RF Input Power
P_in
Storage Temperature Range
T_stg
Operating Case Temperature Range
T_C
Table 2. Electrical Characteristics (V_DD = 26 Vdc, T_C = 25°C; 50 Ω System)
Characteristic
Symbol
Supply Current
Power Gain
Gain Flatness
Power Output @ 1 dB Compression
(f = 880 MHz)
(f = 800 - 960 MHz)
(f = 880 MHz)
I_DD
G_p
G_F
P1dB
Third Order Intercept (f1 = 879 MHz, f2 = 884 MHz)
ITO
Noise Figure
(f = 800 - 960 MHz)
NF
Value
30
+10
- 40 to +100
- 20 to +100
Min
Typ
Max
—
550
620
29
30.5
32
—
0.1
0.3
33
34
—
46
47
—
—
3.5
4.5
Unit
Vdc
dBm
°C
°C
Unit
mA
dB
dB
dBm
dBm
dB
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MHL9236N
1