MHL21336N Datasheet, PDF (1/5 Pages) Freescale Semiconductor, Inc – 3G Band RF Linear LDMOS Amplifier

Freescale Semiconductor
Technical Data
3G Band
RF Linear LDMOS Amplifier
Designed for ultra - linear amplifier applications in 50 ohm systems operating in
the 3G frequency band. A silicon FET Class A design provides outstanding
linearity and gain. In addition, the excellent group delay and phase linearity
characteristics are ideal for digital CDMA modulation systems.
• Third Order Intercept: 45 dBm Typ
• Power Gain: 31 dB Typ (@ f = 2140 MHz)
• Input VSWR v 1.5:1
Features
• Excellent Phase Linearity and Group Delay Characteristics
• Ideal for Feedforward Base Station Applications
• N Suffix Indicates Lead - Free Terminations
Document Number: MHL21336N
Rev. 7, 8/2006
MHL21336N
2110 - 2170 MHz
3.0 W, 31 dB
RF LINEAR LDMOS AMPLIFIER
CASE 301AP - 02, STYLE 1
Table 1. Absolute Maximum Ratings (T_C = 25°C unless otherwise noted)
Rating
Symbol
DC Supply Voltage
V_DD
RF Input Power
P_in
Storage Temperature Range
T_stg
Operating Case Temperature Range
T_C
Table 2. Electrical Characteristics (V_DD = 26 Vdc, T_C = 25°C; 50 Ω System)
Characteristic
Symbol
Supply Current
Power Gain
Gain Flatness
Power Output @ 1 dB Compression
(f = 2140 MHz)
(f = 2110 - 2170 MHz)
(f = 2140 MHz)
I_DD
G_p
G_F
P1dB
Third Order Intercept (f1 = 2137 MHz, f2 = 2142 MHz)
ITO
Noise Figure
(f = 2170 MHz)
NF
Value
30
+5
- 40 to +100
- 20 to +100
Min
Typ
Max
—
500
525
30
31
33
—
0.15
0.4
34
35
—
44
45
—
—
4.5
5
Unit
Vdc
dBm
°C
°C
Unit
mA
dB
dB
dBm
dBm
dB
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MHL21336N
1