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FSM75N75 Datasheet, PDF (1/9 Pages) FOSLINK SEMICONDUCTOR CO.,LTD – N-CHANNEL 75V 0.0097Ω 80A POWER MOSFET | |||
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N-CHANNEL 75V 0.0097⦠80A POWER MOSFET
 FEATURES
Part No
VD S S
(at Tj(max))
RD S ( o n )
ID
FSM75N75 75V
<0.011â¦
80A
z Exceptional dv/dt capability
z 100% avalanche tested
z Low intrinsic capacitances
 ADVANTAGES
z Easy to mount
z Space savings
z High power density
FSM75N75
 GENERAL DESCRIPTION
This Power MOSFET series has specifically been
designed to minimize input capacitance and gate
charge. It is therefore suitable as primary switch in
advanced high-efficiency, high-frequency isolated
DC-DC converters for Telecom and Computer
applications. It is also intended for any applications
with low gate drive requirements.
 APPLICATIONS
z DC motor control
z Solenoid and relay drivers
z DC-DC Converters
z Automotive environment
 INTERNAL SCHEMATIC DIAGRAM AND EXTERIOR
 ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDSS
VGS
ID
TJ = 25°C to 150°C
Continuous
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC = 100°C
IDM
Drain current (pulsed with limited by TJM) at TC = 25°C
TJ = 25°C
PD
Derating Factor
dv/dt
EAS
Peak diode recovery voltage slope
(ISDâ¤80A, di/dtâ¤300A/µs, VDDâ¤V(BR)DSS, TJâ¤TJMAX)
TJ = 25°C, ID = 40A, VDD= 38V
TJ
Max operating junction temperature
Tstg
Storage temperature
1/9
Rating
75
± 20
80
65
320
200
1.5
15
700
160
Unit
V
V
A
A
W
W/°C
V/ns
mJ
°C
-55 to 160
°C
2007-7-27
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