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FSM75N75 Datasheet, PDF (1/9 Pages) FOSLINK SEMICONDUCTOR CO.,LTD – N-CHANNEL 75V 0.0097Ω 80A POWER MOSFET
N-CHANNEL 75V 0.0097Ω 80A POWER MOSFET
„ FEATURES
Part No
VD S S
(at Tj(max))
RD S ( o n )
ID
FSM75N75 75V
<0.011Ω
80A
z Exceptional dv/dt capability
z 100% avalanche tested
z Low intrinsic capacitances
„ ADVANTAGES
z Easy to mount
z Space savings
z High power density
FSM75N75
„ GENERAL DESCRIPTION
This Power MOSFET series has specifically been
designed to minimize input capacitance and gate
charge. It is therefore suitable as primary switch in
advanced high-efficiency, high-frequency isolated
DC-DC converters for Telecom and Computer
applications. It is also intended for any applications
with low gate drive requirements.
„ APPLICATIONS
z DC motor control
z Solenoid and relay drivers
z DC-DC Converters
z Automotive environment
„ INTERNAL SCHEMATIC DIAGRAM AND EXTERIOR
„ ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDSS
VGS
ID
TJ = 25°C to 150°C
Continuous
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC = 100°C
IDM
Drain current (pulsed with limited by TJM) at TC = 25°C
TJ = 25°C
PD
Derating Factor
dv/dt
EAS
Peak diode recovery voltage slope
(ISD≤80A, di/dt≤300A/µs, VDD≤V(BR)DSS, TJ≤TJMAX)
TJ = 25°C, ID = 40A, VDD= 38V
TJ
Max operating junction temperature
Tstg
Storage temperature
1/9
Rating
75
± 20
80
65
320
200
1.5
15
700
160
Unit
V
V
A
A
W
W/°C
V/ns
mJ
°C
-55 to 160
°C
2007-7-27