TIP32 Datasheet, PDF (2/6 Pages) Power Innovations Ltd – PNP SILICON POWER TRANSISTORS

TIP32
Rev.F Mar.-2016
DATA SHEET
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current-Continuous
Peak Collector Current
Base Current - Continuous
Collector Power Dissipation
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
P_C (Tc=25℃)
T_j
T_sag
TIP32
-40
-40
数值
Rating
TIP32A TIP32B
-60
-80
-60
-80
-5.0
-3.0
-5.0
-3.0
2.0
40
150
-55～150
TIP32C
-100
-100
单位
Unit
V
V
V
A
A
A
W
W
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
符号
Symbol
TIP32
Collector to Emitter
Breakdown Voltage
V_CEO
TIP32A
TIP32B
Collector Cut-Off Current I_CEO
TIP32C
TIP32
TIP32A
TIP32B
TIP32C
TIP32
Collector Cut-Off Current I_CES
TIP32A
TIP32B
TIP32C
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter
Saturation Voltage
Base to Emitter Saturation
Voltage
Transition Frequency
I_EBO
h_FE(1)
h_FE(2)
V_CE(sat)
V_BE(sat)
f_T
测试条件
Test Conditions
最小值 典型值 最大值 单位
Min Typ Max Unit
-40
I_C=-30mA I_B=0
-60
V
-80
-100
V_CE=-30V I_B=0
V_CE=-60V I_B=0
V_CE=-40V V_EB=0
V_CE=-60V V_EB=0
V_CE=-80V V_EB=0
V_CE=-100V V_EB=0
V_EB=-5.0V I_C=0
V_CE=-4.0V I_C=-3.0A
10
V_CE=-4.0V I_C=-1.0A
25
-0.3
mA
-0.3
-200
-200
μA
-200
-200
-1.0 mA
50
I_C=-3.0A I_B=-375mA
-1.2 V
I_C=-3.0A V_CE=-4.0V
V_CE=-10V I_C=-500mA 3.0
-1.8 V
MHz
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