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| TIP142T Datasheet, PDF (2/2 Pages) STMicroelectronics – COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS | |||
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TIP142T
Rev.F Mar.-2016
æéåæ° / Absolute Maximum Ratings(Ta=25â)
åæ°
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Peak Collector Current
Base Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符å·
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC(TC=25â )
Tj
Tstg
DATA SHEET
æ°å¼
Rating
100
100
5
10
15
0.5
80
150
-55ï½150
åä½
Unit
V
V
V
A
A
A
W
â
â
çµæ§è½åæ° / Electrical Characteristics(Ta=25â)
åæ°
Parameter
Collector to Emitter Breakdown
Voltage
符å·
Symbol
VCEO
Collector Cut-Off Current
ICEO
Collector Cut-Off Current
ICBO
Emitter Cut-Off Current
IEBO
DC Current Gain
hFE(1)
hFE(2)
Collector to Emitter Saturation
Voltage
VCE(sat)(1)
VCE(sat)(2)
Base to Emitter Saturation Voltage VBE(sat)
Base to Emitter Voltage
VBE
Delay Time
tD
Rise Time
tR
Storage Time
tSTG
Fall Time
tF
æµè¯æ¡ä»¶
Test Conditions
IC=30mA IB=0
VCE=50V
VCB=100V
VEB=5V
VCE=4V
VCE=4V
IC=5A
IC=10A
IC=10A
VCE=4V
IB=0
IE=0
IC=0
IC=5A
IC=10A
IB=10mA
IB=40mA
IB=40mA
IC=10A
VCC=30V
IB1=20mA
RL=6â¦
IC=5A
IB2=20mA
æå°å¼ å
¸åå¼ æå¤§å¼ åä½
Min Typ Max Unit
100
V
2 mA
1 mA
2 mA
1000
500
2
V
3
V
3.5 V
3
V
0.15
μs
0.55
μs
2.5
μs
2.5
μs
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