TIP117 Datasheet, PDF (2/6 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)

TIP117
Rev.F Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Peak Collector Current
Base Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
P_C(Tc=25℃)
T_j
T_stg
DATA SHEET
数值
Rating
-100
-100
-5.0
-2.0
-4.0
-50
50
150
-55～150
单位
Unit
V
V
V
A
A
mA
W
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Emitter Breakdown
Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation
Voltage
Base to Emitter On Voltage
Collector output capacitance
符号
Symbol
V_CEO
I_CEO
I_CBO
I_EBO
h_FE(1)
h_FE(2)
V_CE(sat)
V_BE(on)
C_ob
测试条件
Test Conditions
I_C=-30mA I_B=0
V_CE=-50V
V_CB=-100V
V_EB=-5V
V_CE=-4V
V_CE=-4V
I_B=0
I_E=0
I_C=0
I_C=-1A
I_C=-2A
I_C=-2A
I_B=-8mA
I_C=-2A
V_CB=-10V
f=0.1MHz
V_CE=-4V
I_E=0
最小值 典型值 最大值 单位
Min Typ Max Unit
-100
V
1000
500
-2.0 mA
-1.0 mA
-2.0 mA
-2.5 V
-2.8 V
200 pF
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