TIP112 Datasheet, PDF (2/6 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)

TIP112
Rev.F Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Peak Collector Current
Base Current - Continuous
Collector Power Dissipation
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
P_C(Tc=25℃)
T_j
T_stg
DATA SHEET
数值
Rating
100
100
5
2
4
50
2
50
150
-55～150
单位
Unit
V
V
V
A
A
mA
W
W
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Emitter Breakdown
Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation
Voltage
Base to Emitter On Voltage
Collector output capacitance
符号
Symbol
测试条件
Test Conditions
V_CEO I_C=30mA I_B=0
I_CEO
I_CBO
I_EBO
h_FE(1)
h_FE(2)
V_CE=50V
V_CB=100V
V_EB=5V
V_CE=4V
V_CE=4V
I_B=0
I_E=0
I_C=0
I_C=1A
I_C=2A
V_CE(sat) I_C=2A
I_B=8mA
V_BE(on)
C_ob
I_C=2A
V_CB=10V
f=0.1MHz
V_CE=4V
I_E=0
最小值 典型值 最大值 单位
Min Typ Max Unit
100
V
1000
500
2 mA
1 mA
2 mA
2.5 V
2.8 V
100 pF
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