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STBV45 Datasheet, PDF (2/6 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | |||
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STBV45
Rev.E Mar.-2016
DATA SHEET
æéåæ° / Absolute Maximum Ratings(Ta=25â)
åæ°
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Peak Collector Current - Continuous
Base Current - Continuous
Peak Base Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符å·
Symbol
VCES
VCEO
VEBO
IC
ICM
IB
IBM
PC
Tj
Tstg
æ°å¼
Rating
700
400
9.0
0.75
1.5
0.4
0.75
0.95
150
-55ï½150
åä½
Unit
V
V
V
A
A
A
A
W
â
â
çµæ§è½åæ° / Electrical Characteristics(Ta=25â)
åæ°
符å·
æµè¯æ¡ä»¶
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
Emitter to Base Breakdown
Voltage
Symbol
Test Conditions
VCES IC=1mA
VBE=0
VCEO IC=10mA IB=0
VEBO IE=1mA
IC=0
Collector Cut-Off Current
ICEV VCE=700V VBE=-1.5V
Collector cut-off current
ICEO VCE=400V IB=0
Emitter Base Cut-Off Current
IEBO VEB=9.0V IC=0
DC Current Gain
*hFE(1)
*hFE(2)
VCE=5.0V
VCE=5.0V
IC=0.2A
IC=0.4A
Collector to Emitter Saturation
Voltage
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
IC=0.2A
IC=0.3A
IC=0.4A
IB=0.04A
IB=0.075A
IB=0.135A
*VBE(sat)1 IC=0.2A
Base to Emitter Saturation Voltage
*VBE(sat)2 IC=0.3A
IB=0.04A
IB=0.075A
Fall time
Storage time
tf
VCE=5V
ts
(UI9600)
Transition Frequency
fT
VCE=10V
f=1MHz
*èå²æµè¯ï¼èå²å¨æ=300μSï¼å 空æ¯=1.5%ã
*Pulsed:Pulsed duration=300μs,duty cycleâ¤1.5%.
IC=100mA
IC=50mA
æå°å¼ å
¸åå¼ æå¤§å¼ åä½
Min Typ Max Unit
700
V
400
V
9
V
0.1 mA
0.1 mA
0.1 mA
10
30
5
20
0.2 0.5 V
0.3 1.0 V
0.4 1.5 V
1.0 V
1.2 V
0.6 μS
4.0 μS
5
MHz
http://www.fsbrec.com
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