STBV32 Datasheet, PDF (2/6 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

STBV32
Rev.E Mar.-2016
DATA SHEET
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Peak Collector Current - Continuous
Base Current - Continuous
Peak Base Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
V_CES
V_CEO
V_EBO
I_C
I_CM
I_B
I_BM
P_C
T_j
T_stg
数值
Rating
700
400
9.0
1.5
3.0
0.5
1.5
1.0
150
-55～150
单位
Unit
V
V
V
A
A
A
A
W
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
Emitter to Base Breakdown
Voltage
Collector Cut-Off Current
符号
Symbol
V_CES
测试条件
Test Conditions
I_C=1mA
V_BE=0
最小值 典型值 最大值 单位
Min Typ Max Unit
700
V
V_CEO I_C=10mA I_B=0
400
V
V_EBO I_E=1mA
I_C=0
9
I_CEV V_CE=700V V_BE=-1.5V
V
0.1 mA
Collector cut-off current
I_CEO V_CE=400V I_B=0
0.1 mA
Emitter Base Cut-Off Current
I_EBO V_EB=9.0V I_C=0
0.1 mA
DC Current Gain
h_FE(1) V_CE=2.0V I_C=0.5A
10
35
h_FE(2) V_CE=2.0V I_C=1.0A
5
25
Collector to Emitter Saturation
Voltage
*V_CE(sat)1
*V_CE(sat)2
*V_CE(sat)3
I_C=500mA
I_C=1.0A
I_C=1.5A
I_B=100mA
I_B=250mA
I_B=500mA
0.5 V
1.0 V
1.5 V
Base to Emitter Saturation Voltage _{*VBE(sat)1 IC=500mA IB=100mA}
1.0 V
Base to Emitter Saturation Voltage _{*VBE(sat)2 IC=1.0A}
I_B=250mA
1.2 V
Fall time
Storage time
t_f
V_CE=5V
I_C=0.25A
t_S
(UI9600)
0.6 μs
3.0 μs
Transition Frequency
f_T
V_CE=10V
f=1MHz
I_C=0.1A
5
MHz
*脉冲测试：脉冲周期=300μS，占空比=1.5%   *Pulsed:Pulsed duration=300μs,duty cycle≤1.5%.
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