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| S8550W Datasheet, PDF (2/6 Pages) Foshan Blue Rocket Electronics Co.,Ltd. – Silicon PNP transistor in a SOT-323 Plastic Package | |||
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S8550W
Rev.E Mar.-2016
æéåæ° / Absolute Maximum Ratings(Ta=25â)
åæ°
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Base Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符å·
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
DATA SHEET
æ°å¼
Rating
-40
-25
-6.0
-800
-200
250
150
-65ï½150
åä½
Unit
V
V
V
mA
mA
mW
â
â
çµæ§è½åæ° / Electrical Characteristics(Ta=25â)
åæ°
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
符å·
Symbol
æµè¯æ¡ä»¶
Test Conditions
VCBO IC=-0.1mA IE=0
VCEO IC=-2.0mA IB=0
Emitter to Base Breakdown Voltage VEBO IE=-0.1mA IC=0
æå°å¼ å
¸åå¼ æå¤§å¼ åä½
Min Typ Max Unit
-40
V
-25
V
-6.0
V
Collector Cut-Off Current
ICBO VCB=-35V IE=0
-0.1 μA
Emitter Base Cut-Off Current
IEBO VEB=-6.0V IC=0
-0.1 μA
hFE(1) VCE=-1.0V IC=-100mA 85
300
DC Current Gain
hFE(2) VCE=-1.0V IC=-500mA 40
hFE(3) VCE=-1.0V IC=-5.0mA 45
Collector-Emitter Saturation Voltage VCE(sat) IC=-500mA IB=-50mA
-0.28 -0.6 V
Base-Emitter Saturation Voltage
VBE(sat) IC=-500mA IB=-50mA
-0.98 -1.2 V
Collector-Emitter Voltage
VBE VCE=-1.0V IC=-10mA
-0.66 -1.0 V
Transition Frequency
Output Capacitance
fT VCE=-10V IC=-50mA
Cob
VCB=-10V
f=1.0MHz
IE=0
100 200
15
MHz
pF
http://www.fsbrec.com
2/6
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