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| PBSS4140S Datasheet, PDF (2/6 Pages) NXP Semiconductors – 40 V low VCEsat NPN transistor | |||
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PBSS4140S
Rev.E Mar.-2016
æéåæ° / Absolute Maximum Ratings(Ta=25â)
åæ°
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Peak Collector Current
Peak Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符å·
Symbol
VCBO
VCEO
VEBO
IC
ICM
IBM
PC
Tj
Tstg
DATA SHEET
æ°å¼
Rating
40
40
5.0
1.0
2.0
1.0
830
150
-55ï½150
åä½
Unit
V
V
V
A
A
A
mW
â
â
çµæ§è½åæ° / Electrical Characteristics(Ta=25â)
åæ°
Parameter
符å·
Symbol
Collector Cut-Off Current
ICBO
Collector Cut-Off Current
ICEO
Emitter Cut-Off Current
IEBO
hFE(1)
DC Current Gain
hFE(2)
hFE(3)
Collector to Emitter Saturation
Voltage
VCE(sat)(1)
VCE(sat)(2)
VCE(sat)(3)
Base to Emitter Saturation Voltage VBE(sat)
Base to Emitter Voltage
VBE
Transition Frequency
fT
Collector Capacitance
CC
æµè¯æ¡ä»¶
Test Conditions
VCB=40V IE=0
VCE=30V IB=0
VEB=5.0V IC=0
VCE=5.0V IC=500mA
VCE=5.0V IC=1.0mA
VCE=5.0V IC=1.0A
IC=100mA IB=1.0mA
IC=500mA IB=50mA
IC=1.0A
IB=100mA
IC=1.0A
IB=100mA
VCE=5.0V
VCE=10V
f=100MHz
VCB=10V
f=1.0MHz
IC=1.0A
IC=50mA
IE=0
æå°å¼ å
¸åå¼ æå¤§å¼ åä½
Min Typ Max Unit
0.1 μA
0.1 μA
0.1 μA
300
900
300
200
200 mV
250 mV
500 mV
1.2 V
1.1 V
150
MHz
10 pF
http://www.fsbrec.com
2/6
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