MPSA06 Datasheet, PDF (2/6 Pages) NXP Semiconductors – NPN general purpose transistor

MPSA06
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Peak Collector Current
Peak Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_BM
P_C
T_j
T_stg
DATA SHEET
数值
Rating
80
80
5
500
1
200
625
150
-55～150
单位
Unit
V
V
V
mA
A
mA
mW
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation
Voltage
Base to Emitter Voltage
Transition Frequency
符号
Symbol
测试条件
Test Conditions
I_CBO V_CB=80V I_E=0
I_EBO V_EB=5
I_C=0
h_FE(1) V_CE=1V
I_C=100mA
h_FE(2) V_CE=1V
I_C=10mA
V_CE(sat) I_C=100mA I_B=10mA
V_BE V_CE=1V
I_C=100mA
f_T
V_CE=2V
I_C=10mA
f=100MHz
最小值 典型值 最大值 单位
Min Typ Max Unit
0.05 μA
0.05 μA
100
100
0.25 V
1.2 V
100
MHz
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