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MMBTH10 Datasheet, PDF (2/6 Pages) Diodes Incorporated – NPN SURFACE MOUNT VHF/UHF TRANSISTOR
MMBTH10
Rev.F Apr.-2017
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current-Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
DATA SHEET
数值
Rating
30
25
3
50
225
150
-55~150
单位
Unit
V
V
V
mA
mW
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
符号
Symbol
测试条件
Test Conditions
VCBO IC=100μA IE=0
VCEO IC=1.0mA IB=0
Emitter to Base Breakdown Voltage VEBO IE=10μA IC=0
Collector Cut-Off Current
ICBO VCB=25 V IE=0
Emitter Base Cut-Off Current
IEBO VEB=2.0V IC=0
DC Current Gain
Collector to Emitter Saturation
Voltage
hFE VCE=10V
VCE(sat) IC=4.0mA
IC=4.0mA
IB=0.4mA
Base-Emitter Voltage
Transition Frequency
Collector–Base Capacitance
Common–Base Feedback
Capacitance
Collector Base Time Constant
VBE
fT
Ccb
Crb
rb’Cc
VCE=10V
IC=4.0mA
f=100MHz
VCB=10V
f=1.0MHz
VCB=10V
f=1.0MHz
VCB=10V
f=31.8MHz
IC=4.0mA
VCE=10V
IE=0
IE=0
IC=4.0mA
最小值 典型值 最大值 单位
Min Typ Max Unit
30
V
25
V
3.0
V
0.1 μA
0.1 μA
60
0.5 V
0.95 V
650
MHz
0.7 pF
0.35
0.65 pF
9.0 pS
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