MMBTA92T Datasheet, PDF (2/6 Pages) Foshan Blue Rocket Electronics Co.,Ltd. – Silicon PNP transistor in a SOT-89 Plastic Package

MMBTA92T
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
DATA SHEET
数值
Rating
-300
-300
-5.0
-500
500
150
-55～150
单位
Unit
V
V
V
mA
mW
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
符号
Symbol
测试条件
Test Conditions
V_CBO I_C=-100μA I_E=0
V_CEO I_C=-1.0mA I_B=0
Emitter to Base Breakdown Voltage V_EBO I_E=-100μA I_C=0
Collector Cut-Off Current
I_CBO V_CB=-200V I_E=0
Emitter Base Cut-Off Current
I_EBO V_BE=-3.0V I_C=0
h_FE(1) V_CE=-10V I_C=-10mA
DC Current Gain
h_FE(2) V_CE=-10V I_C=-30mA
Collector to Emitter Saturation
Voltage
Emitter to Base Saturation Voltage
Transition Frequency
Collector-Base Capacitance
h_FE(3) V_CE=-10V
V_CE(sat) I_C=-20mA
V_BE(sat)
f_T
C_cb
I_C=-20mA
V_CE=-20V
f=100MHz
V_CB=-20V
f=1.0MHz
I_C=-1.0mA
I_B=-2.0mA
I_B=-2.0mA
I_C=-10mA
I_E=0
最小值 典型值 最大值 单位
Min Typ Max Unit
-300
V
-300
-5.0
40
25
25
50
V
V
-0.25 μA
-0.1 μA
-0.5 V
-0.9 V
MHz
6.0 pF
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