MMBTA56W Datasheet, PDF (2/6 Pages) ON Semiconductor – Driver Transistor

MMBTA56W
Rev.E Mar.-2016
DATA SHEET
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range

符号
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
电性能参数 / Electrical Characteristics(Ta=25℃)
数值
Rating
-80
-80
-5.0
-0.5
150
150
-55～150
单位
Unit
V
V
V
A
mW
℃
℃
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Emitter Base Cut-Off Current
DC Current Gain
Collector to Emitter Saturation
Voltage
Base-Emitter On Voltage
Transition Frequency
符号
Symbol
测试条件
Test Conditions
V_CBO I_C=-100μA I_E=0
最小值 典型值 最大值 单位
Min Typ Max Unit
-80
V
V_CEO I_C=-1.0mA I_B=0
-80
I_CBO V_CB=-80 V I_E=0
I_CEO V_CB=-60 V I_B=0
I_EBO V_BE=-4.0V I_C=0
h_FE(1) V_CE=-1.0V I_C=-100mA 100
h_FE(2) V_CE=-1.0V I_C=-10mA
100
V_CE(sat) I_C=-100mA I_B=-10mA
V_BE V_CE=-1.0V I_B=-100mA
f_T
I_E=100mA V_CE=-1.0V
f=100MHz
50
V
-0.1 μA
-1.0 μA
-0.1 μA
-0.25 V
-1.2 V
MHz
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