MMBTA44T Datasheet, PDF (2/6 Pages) Foshan Blue Rocket Electronics Co.,Ltd. – Silicon NPN transistor in a SOT-89 Plastic Package

MMBTA44T
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
P_{C(TC=25℃ )}
T_j
T_stg
DATA SHEET
数值
Rating
500
400
6.0
300
350
1.5
150
-55～150
单位
Unit
V
V
V
mA
mW
W
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
符号
Symbol
测试条件
Test Conditions
V_CBO I_C=100μA I_E=0
V_CEO I_C=1.0mA I_B=0
Emitter to Base Breakdown Voltage V_EBO I_E=10μA I_C=0
Collector Cut-Off Current
I_CBO V_CB=400V I_E=0
Emitter Cut-Off Current
I_CEO V_CE=400V V_BE=0
Emitter Base Cut-Off Current
I_EBO V_BE=4.0V I_C=0
h_FE(1) V_CE=10V I_C=10mA
DC Current Gain
h_FE(2)
h_FE(3)
V_CE=10V
V_CE=10V
I_C=100mA
I_C=50mA
h_FE(4) V_CE=10V I_C=1.0mA
Collector to Emitter Saturation
Voltage
V_{CE(sat) (1)} I_C=1.0mA
V_{CE(sat) (2)} I_C=10mA
V_{CE(sat) (3)} I_C=50mA
I_B=0.1mA
I_B=1.0mA
I_B=5.0mA
Emitter to Base Saturation Voltage
Collector-Base Capacitance
V_BE(sat)
C_ob
I_C=10mA
V_CB=20V
f=1.0MHz
I_B=1.0mA
I_E=0
最小值 典型值 最大值 单位
Min Typ Max Unit
500
V
400
V
6.0
V
0.1 μA
0.5 μA
0.1 μA
50
200
40
45
40
0.4 V
0.5 V
0.75 V
0.75 V
7.0 pF
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