MMBTA06 Datasheet, PDF (2/6 Pages) Samsung semiconductor – NPN (DRIVER TRANSISTOR)

MMBTA06
Rev.FApr.-2017
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
DATA SHEET
数值
Rating
80
80
4.0
500
300
150
-55～150
单位
Unit
V
V
V
mA
mW
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
符号
Symbol
测试条件
Test Conditions
V_CBO I_C=100μA I_E=0
V_CEO I_C=1.0mA I_B=0
Emitter to Base Breakdown Voltage V_EBO I_E=100μA I_C=0
Collector Cut-Off Current
I_CBO V_CB=80 V I_E=0
Collector Cut-Off Current
I_CES V_CE=80V I_E=0
DC Current Gain
Collector to Emitter Saturation
Voltage
h_FE(1)
h_FE(2)
V_CE=1.0V
V_CE=1.0V
V_CE(sat) I_C=100mA
I_C=100mA
I_C=10mA
I_B=10mA
Base to Emitter Saturation Voltage
Transition Frequency
V_BE(sat)
f_T
I_C=100mA
I_C=10mA
f=100MHz
I_B=10mA
V_CE=2V
最小值 典型值 最大值 单位
Min Typ Max Unit
80
V
80
4.0
100
100
100
V
V
0.1 μA
0.1 μA
300
300
0.25 V
1.2 V
MHz
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