MMBT5401T Datasheet, PDF (2/6 Pages) Foshan Blue Rocket Electronics Co.,Ltd. – Silicon PNP transistor in a SOT-89 Plastic Package

MMBT5401T
Rev.E Mar.-2016
DATA SHEET
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Base - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
数值
Rating
-180
-160
-6.0
-600
-300
500
150
-55～150
单位
Unit
V
V
V
mA
mA
mW
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
符号
Symbol
测试条件
Test Conditions
Collector Cut-Off Current
I_CBO V_CB=-180V I_E=0
Emitter Base Cut-Off Current
I_EBO V_EB=-6.0V I_C=0
h_FE(1) V_CE=-5.0V I_C=-10mA
DC Current Gain
h_FE(2) V_CE=-5.0V I_C=-50mA
h_FE(3) V_CE=-5.0V I_C=-1.0mA
Collector to Emitter Saturation
Voltage
V_{CE(sat) (1)} I_C=-10mA
V_{CE(sat) (2)} I_C=-50mA
I_B=-1.0mA
I_B=-5.0mA
V_{BE(sat) (1)} I_C=-10mA
Emitter to Base Saturation Voltage
V_{BE(sat) (2)} I_C=-50mA
I_B=-1.0mA
I_B=-5.0mA
Emitter to Base Voltage
V_BE V_CE=-5.0V I_C=-10mA
Transition Frequency
Collector Output Capacitance
f_T V_CE=-10V I_E=10mA
C_ob
V_CB=-10V
f=10MHz
I_E=0
Turn-on Time
Turn-off Time
Storage Time
t_on
t_off
I_C=-100Ma
-I_B1=I_B2=-10mA
t_stg
最小值 典型值 最大值 单位
Min Typ Max Unit
-0.1 μA
-0.1 μA
50 200 400
20 70
40 180
-0.12 -0.4 V
-0.5 -0.8 V
-0.75 -1.0 V
-0.8 -1.0 V
-0.7 -0.75 V
50 80
MHz
2.5 5.0 pF
0.1
μs
0.2
μs
0.1
μs
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