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MMBT4401W Datasheet, PDF (2/6 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon General Purpose Transistor | |||
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MMBT4401W
Rev.E Mar.-2016
æéåæ° / Absolute Maximum Ratings(Ta=25â)
åæ°
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符å·
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
DATA SHEET
æ°å¼
Rating
60
40
6.0
600
200
150
-55ï½150
åä½
Unit
V
V
V
mA
mW
â
â
çµæ§è½åæ° / Electrical Characteristics(Ta=25â)
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符å·
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Parameter
Collector to Emitter Breakdown
Voltage
Collector to Base Breakdown
Voltage
Symbol
Test Conditions
VCEO IC=1.0mA IB=0
VCBO IC=0.1mA IE=0
Emitter to Base Breakdown Voltage VEBO IE=0.1mA IC=0
Collector Cut-Off Current
ICBO VCB=60V IE=0
Emitter to Base Current
IEBO VEB=6.0V IC=0
hFE(1) VCE=1.0V IC=150mA
hFE(2) VCE=2.0V IC=500mA
DC Current Gain
hFE(3) VCE=1.0V IC=10mA
hFE(4) VCE=1.0V IC=1.0mA
hFE(5) VCE=1.0V IC=0.1mA
Collector to Emitter Saturation
Voltage
VCE(sat) (1) IC=150mA
VCE(sat) (2) IC=500mA
IB=15mA
IB=50mA
Base to Emitter Saturation Voltage
Transition Frequency
VBE(sat) (1) IC=150mA
VBE(sat) (2) IC=500mA
fT
VCE=10V
f=100MHz
IB=15mA
IB=50mA
IC=20mA
Delay Time
Rise Time
td
VCC=30V
IC=150mA
tr
IB1=15mA
Storage Time
Fall Time
ts
VCC=30V
IC=150mA
tf
IB1=-IB2=15mA
æå°å¼ å
¸åå¼ æå¤§å¼ åä½
Min Typ Max Unit
40
V
60
V
6.0
V
50 nA
50 nA
100
300
40
80
40
20
0.4 V
0.75 V
0.75 0.95 V
1.2 V
250
MHz
15 ns
20 ns
225 ns
30 ns
http://www.fsbrec.com
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