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| MMBT3906W Datasheet, PDF (2/7 Pages) Weitron Technology – General Purpose Transistor PNP Silicon | |||
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MMBT3906W
Rev.E Mar.-2016
æéåæ° / Absolute Maximum Ratings(Ta=25â)
åæ°
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符å·
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
DATA SHEET
æ°å¼
Rating
-40
-40
-5.0
-200
200
150
-55ï½150
åä½
Unit
V
V
V
mA
mW
â
â
çµæ§è½åæ° / Electrical Characteristics(Ta=25â)
åæ°
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
符å·
Symbol
æµè¯æ¡ä»¶
Test Conditions
VCBO IC=-10μA IE=0
VCEO IC=-1.0mA IB=0
æå°å¼ å
¸åå¼ æå¤§å¼ åä½
Min Typ Max Unit
-40
V
-40
V
Emitter to Base Breakdown Voltage VEBO IE=-10μA IC=0
-5.0
V
Collector Cut-Off Current
ICBO VCB=-30V IE=0
-0.05 μA
Emitter to Base Current
IEBO VEB=-3.0V IC=0
-0.05 μA
hFE(1) VCE=-1.0V IC=-10mA
100
300
hFE(2) VCE=-1.0V IC=-100mA 30
DC Current Gain
hFE(3) VCE=-1.0V IC=-50mA
60
hFE(4) VCE=-1.0V IC=-1.0mA 80
hFE(5) VCE=-1.0V IC=-0.1mA 60
Collector to Emitter Saturation
Voltage
VCE(sat) (1) IC=-10mA
VCE(sat) (2) IC=-50mA
IB=-1.0mA
IB=-5.0mA
-0.25 V
-0.4 V
VBE(sat) (1) IC=-10mA
Base to Emitter Saturation Voltage
VBE(sat) (2) IC=-50mA
IB=-1.0mA -0.65
IB=-5.0mA
-0.85 V
-0.95 V
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