MMBT3904T Datasheet, PDF (2/7 Pages) Diodes Incorporated – NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

MMBT3904T
Rev.E Mar.-2016
DATA SHEET
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Collector Power Dissipation*
Junction Temperature
Storage Temperature Range
*在 7×5×0.6mm 陶瓷板上
*When mounted on a 7×5×0.6mm ceramic board
符号
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
*P_C
T_j
T_stg
电性能参数 / Electrical Characteristics(Ta=25℃)
数值
Rating
60
40
6.0
200
200
350
150
-55～150
单位
Unit
V
V
V
mA
mW
mW
℃
℃
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
符号
Symbol
测试条件
Test Conditions
V_CBO I_C=10μA
I_E=0
V_CEO I_C=1.0mA I_B=0
Emitter to Base Breakdown Voltage V_EBO I_E=10μA I_C=0
Collector Cut-Off Current
I_CBO V_CB=30V I_E=0
Emitter Base Cut-Off Current
I_EBO V_EB=3.0V I_C=0
h_FE(1) V_CE=1.0V I_C=10mA
h_FE(2) V_CE=1.0V I_C=100mA
DC Current Gain
h_FE(3) V_CE=1.0V I_C=50mA
h_FE(4) V_CE=1.0V I_C=1mA
h_FE(5) V_CE=1.0V I_C=0.1mA
Collector to Emitter Saturation
Voltage
V_{CE(sat) (1)} I_C=10mA
V_{CE(sat) (2)} I_C=50mA
I_B=1.0mA
I_B=5.0mA
Emitter to Base Saturation Voltage V_{BE(sat) (1)} I_C=10mA I_B=1.0mA
最小值 典型值 最大值 单位
Min Typ Max Unit
60
V
40
6.0
100
30
60
70
40
0.65
V
V
0.05 μA
0.05 μA
300
0.2 V
0.3 V
0.85 V
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