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MMBT2907A Datasheet, PDF (2/6 Pages) STMicroelectronics – SMALL SIGNAL PNP TRANSISTOR
MMBT2907A
Rev.FApr.-2017
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
DATA SHEET
数值
Rating
-60
-60
-5.0
-600
350
150
-55~150
单位
Unit
V
V
V
mA
mW
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
Emitter to Base Breakdown
Voltage
Collector Cut-Off Current
DC Current Gain
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Output Capacitance
Turn–On Time
Turn–Off Time
符号
Symbol
VCBO
测试条件
Test Conditions
IC=-10μA IE=0
最小值 典型值 最大值 单位
Min Typ Max Unit
-60
V
VCEO IC=-10mA IB=0
-60
V
VEBO IE=-10μA IC=0
-5.0
ICBO VCB=-50V IE=0
hFE(1) VCE=-10V IC=-150mA 100
hFE(2) VCE=-10V IC=-500mA 50
hFE(3) VCE=-10V IC=-10mA 100
hFE(4) VCE=-10V IC=-1.0mA 100
hFE(5) VCE=-10V IC=-0.1mA 75
VCE(sat) (1) IC=-150mA IB=-15 mA
VCE(sat) (2) IC=-500mA IB=-50mA
VBE(sat) (1) IC=-150mA IB=-15 mA
VBE(sat) (2) IC=-500mA IB=-50mA
fT
VCE=-20V IC=-50mA
f=100MHz
200
Cob
VCB=-10V IE=0
f=1.0MHz
ton
VCC=-30V IC=-150mA
IB1=-15mA
toff
VCC=-30V IC=-150mA
IB1=IB2=-15mA
V
-0.01 μA
300
-0.4 V
-1.6 V
-1.3 V
-2.6 V
MHz
8.0 pF
50 ns
100 ns
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