MMBT2222AT Datasheet, PDF (2/6 Pages) Diodes Incorporated – NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

MMBT2222AT
Rev.E Nov.-2016
DATA SHEET
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
数值
Rating
75
40
6.0
600
500
150
-55～150
单位
Unit
V
V
V
mA
mW
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
符号
Symbol
测试条件
Test Conditions
V_CBO I_C=10μA
I_E=0
V_CEO I_C=10mA I_B=0
Emitter to Base Breakdown Voltage V_EBO I_E=10μA I_C=0
Collector Cut-Off Current
I_CBO V_CB=60V I_E=0
Base Cut-Off Current
I_EBO V_EB=5.0V I_C=0
DC Current Gain
h_FE V_CE=10V I_C=150mA
Collector to Emitter Saturation
Voltage
V_{CE(sat) (1)} I_C=150mA
V_{CE(sat) (2)} I_C=500mA
I_B=15mA
I_B=50mA
Emitter to Base Saturation Voltage
Collector Output Capacitance
Transition Frequency
Turn-On Time
Turn-Off Time
V_{BE(sat) (1)} I_C=150mA I_B=15mA
V_{BE(sat) (2)} I_C=500mA I_B=50mA
C_ob
V_CB=10V
f=1.0MHz
I_E=0
f_T
I_C=20mA V_CE=20V
f=100MHz
t_on
V_CC=30V V_BE=-0.5V
I_C=150mA I_B1=15mA
t_off
V_CC=30V I_C=150mA
I_B1=I_B2=15mA
最小值 典型值 最大值 单位
Min Typ Max Unit
75
V
40
V
6.0
V
0.01 μA
0.1 μA
100
300
0.3 V
1.0 V
0.6
1.2 V
2.0 V
8.0 pF
300
MHz
35 ns
285 ns
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