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| MMBT2222 Datasheet, PDF (2/6 Pages) Samsung semiconductor – NPN (GENERAL PURPOSE TRANSISTOR) | |||
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MMBT2222
Rev.F Apr.-2017
æéåæ° / Absolute Maximum Ratings(Ta=25â)
åæ°
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符å·
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
DATA SHEET
æ°å¼
Rating
60
30
5.0
600
350
150
-55ï½150
åä½
Unit
V
V
V
mA
mW
â
â
çµæ§è½åæ° / Electrical Characteristics(Ta=25â)
åæ°
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
Emitter to Base Breakdown
Voltage
Collector Cut-Off Current
Base Cut-Off Current
DC Current Gain
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Transition Frequency
Turn-On Time
Turn-Off Time
符å·
Symbol
VCBO
æµè¯æ¡ä»¶
Test Conditions
IC=10μA
IE=0
æå°å¼ å
¸åå¼ æå¤§å¼ åä½
Min Typ Max Unit
60
V
VCEO IC=10mA IB=0
30
V
VEBO IE=10μA
IC=0
5.0
ICBO
VCB=50V
IE=0
IEBO
VEB=5.0V IC=0
hFE(1) VCE=10V IC=150mA 100
hFE(2) VCE=10V IC=0.1mA
35
hFE(3) VCE=10V IC=1.0mA
50
hFE(4) VCE=10V IC=10mA
75
hFE(5) VCE=10V IC=500mA 30
VCE(sat) (1) IC=150mA IB=15mA
VCE(sat) (2) IC=500mA IB=50mA
VBE(sat) (1) IC=150mA IB=15 mA
VBE(sat) (2) IC=500mA IB=50mA
Cob VCB=10V f=1.0MHz
fT
IC=20mA VCE=20V
f=100MHz
250
ton
VCC=30V VBE=0.5V
IC=150mA IB1=15mA
toff
VCC=30V IC=150mA
IB1=IB2=15mA
V
0.01 μA
0.1 μA
300
0.4 V
1.6 V
1.3 V
2.6 V
8.0 pF
MHz
35 ns
285 ns
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