MMBR911 Datasheet, PDF (2/6 Pages) Foshan Blue Rocket Electronics Co.,Ltd. – Silicon NPN transistor in a SOT-23 Plastic Package

MMBR911
Rev.FApr.-2017
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
DATA SHEET
数值
Rating
20
12
2.0
60
333
150
-55～150
单位
Unit
V
V
V
mA
mW
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
Collector Cut-Off Current
Forward Current Transfer Ratio
Output Capacitance
Transition Frequency
Noise Figure
Gain @ Noise Figure
符号
Symbol
测试条件
Test Conditions
V_CBO I_C=0.1mA I_E=0
V_CEO
I_CBO
h_FE
C_ob
f_T
NF
G_NF
I_C=1.0mA
V_CE=15V
V_CE=10V
V_CB=10V
V_CE=10V
f=1.0GHz
V_CE=10V
f=1.0GHz
V_CE=10V
f=1.0GHz
I_B=0
I_E=0
I_C=30mA
f=1.0MHz
I_C=30mA
I_C=10mA
I_C=10mA
最小值 典型值 最大值 单位
Min Typ Max Unit
20
V
12
V
0.05 μA
30
300
1.0
pF
6.0
GHz
2.9
dB
11
dB
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