MMBR5179 Datasheet, PDF (2/5 Pages) Samsung semiconductor – RF AMPLIFIER TRANSISTOR

MMBR5179
Rev.F Apr.-2017
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
DATA SHEET
数值
Rating
30
15
3.0
50
375
150
-55～150
单位
Unit
V
V
V
mA
mW
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Emitter Breakdown
Voltage
Collector to Base Breakdown
Voltage
Emitter to Base Breakdown
Voltage
符号
Symbol
测试条件
Test Conditions
V_CEO I_C=3.0mA I_B=0
V_CBO I_C=1.0μA I_E=0
V_EBO I_E=10μA
I_C=0
Collector Cut-Off Current
I_CBO V_CB=15V I_E=0
DC Current Gain
Collector-Emitter Saturation
Voltage
h_FE V_CE=1.0V
V_CE(sat) I_C=10mA
I_C=3.0mA
I_B=1.0mA
Base-Emitter Saturation Voltage
Transition Frequency
V_BE(sat)
f_T
Collector Output Capacitance
C_ob
Noise Figure
NF
Common–Emitter Amplifier Power
Gain
Gpe
I_C=10mA I_B=1.0mA
V_CE=6.0V I_C=5.0mA
f=100MHz
V_CB=10V I_E=0
f=0.1~1.0MHz
I_C=1.5mA
R_S=50Ω
V_CE=6.0V
f=200MHz
V_CE=6.0V
I_C=5.0mA
最小值 典型值 最大值 单位
Min Typ Max Unit
15
V
30
V
3.0
V
0.02 μA
30
250
0.4 V
1.0 V
1400
MHz
1.0 pF
4.5
dB
15
dB
http://www.fsbrec.com
2/5