MJW21194 Datasheet, PDF (2/6 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

MJW21194
Rev.E Sep.-2016
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Peak Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
P_C(TC=25℃ )
T_j
T_stg
DATA SHEET
数值
Rating
400
250
5
16
30
5
200
150
-55～150
单位
Unit
V
V
V
A
A
A
W
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation
Voltage
Base to Emitter Voltage
Transition Frequency
Collector output capacitance
符号
Symbol
测试条件
Test Conditions
V_CEO I_C=100mA I_B=0
I_CEO
I_CBO
I_EBO
h_FE(1)
h_FE(2)
V_CE(sat)(1)
V_CE(sat)(2)
V_BE
f_T
C_ob
V_CE=200V
V_CB=250V
V_EB=5.0V
V_CE=5.0V
V_CE=5.0V
I_C=8.0A
I_C=16A
V_CE=5.0V
V_CE=10V
f=1.0MHz
V_CB=10V
f=1.0MHz
I_E=0
I_E=0
I_C=0
I_C=8.0A
I_C=16A
I_B=0.8A
I_B=3.2A
I_C=8.0A
I_C=1.0A
I_E=0
最小值 典型值 最大值 单位
Min Typ Max Unit
250
V
100 μA
100 μA
100 μA
10
80
8
1.4 V
4
V
2.2 V
4
MHz
500 pF
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