MJW21193 Datasheet, PDF (2/6 Pages) ON Semiconductor – Silicon Power Transistors

MJW21193
Rev.E Sep.-2016
DATA SHEET
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Peak Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
P_C(TC=25℃ )
T_j
T_stg
数值
Rating
-400
-250
-5
-16
-30
-5.0
200
150
-55～150
单位
Unit
V
V
V
A
A
A
W
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation
Voltage
Base to Emitter Voltage
Transition Frequency
Collector output capacitance
符号
Symbol
测试条件
Test Conditions
最小值 典型值 最大值 单位
Min Typ Max Unit
V_CEO I_C=-100mA I_B=0
-250
V
I_CEO V_CE=-200V I_E=0
I_CBO V_CB=-250V I_E=0
I_EBO
V_EB=-5.0V I_C=0
h_FE(1) V_CE=-5.0V I_C=-8.0A 10
h_FE(2) V_CE=-5.0V I_C=-16A
8
V_CE(sat)(1) I_C=-8.0A
I_B=-0.8A
V_CE(sat)(2) I_C=-16A
I_B=-3.2A
V_BE V_CE=-5.0V I_C=-8.0A
f_T
V_CE=-10V I_C=-1A
f=1.0MHz
4
C_ob
V_CB=-10V I_E=0
f=1.0MHz
-100 μA
-100 μA
-100 μA
80
-4
V
-6
V
-2.2 V
MHz
500 pF
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