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MJE350 Datasheet, PDF (2/6 Pages) Motorola, Inc – 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 20 WATTS
MJE350
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
VCBO
VCEO
VEBO
IC
PC
PC(Tc=25℃ )
Tj
Tstg
DATA SHEET
数值
Rating
-300
-300
-5
-500
1
20
150
-55~150
单位
Unit
V
V
V
mA
W
W
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
符号
Symbol
测试条件
Test Conditions
VCBO IC=-0.1mA IB=0
VCEO IC=-1mA
IB=0
Emitter to Base Breakdown Voltage VEBO IC=-0.1mA IB=0
Collector Cut-Off Current
ICBO VCB=-300V IE=0
Emitter Cut-Off Current
IEBO VEB=-3V
IC=0
DC Current Gain
hFE VCE=-10V IC=-50mA
最小值 典型值 最大值 单位
Min Typ Max Unit
-300
V
-300
-5
30
V
V
-100 μA
-100 μA
240
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