MJE3055T Datasheet, PDF (2/6 Pages) Wing Shing Computer Components – SILICON EPITAXIAL PLANAR TRANSISTOR

MJE3055T
Rev.F Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Base Current - Continuous
Collector Power Dissipation
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
P_C(Tc=25℃ )
T_j
T_stg
DATA SHEET
数值
Rating
70
60
5.0
10
6.0
2.0
75
150
-55～150
单位
Unit
V
V
V
A
A
W
W
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Emitter Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Cut-Off Current
DC Current Gain
Collector to Emitter Saturation
Voltage
Base to Emitter On Voltage
Transition Frequency
符号
Symbol
测试条件
Test Conditions
V_CEO I_C=200mA I_B=0
I_CEO
I_EBO
I_CEX
h_FE(1)
h_FE(2)
V_CE(sat)(1)
V_CE(sat)(2)
V_BE(on)
f_T
V_CE=30V I_B=0
V_EB=5.0V I_C=0
V_BE(off)=-1.5V V_CE=70V
V_CE=4.0V I_C=4.0A
V_CE=4.0V I_C=10A
I_C=4.0A
I_B=0.4A
I_C=10A
I_B=3.3A
V_CE=4.0V I_C=4.0A
V_CE=10V I_C=500mA
最小值 典型值 最大值 单位
Min Typ Max Unit
60
V
700 μA
5.0 mA
1.0 mA
20
100
5.0
1.1 V
8.0 V
1.8 V
2.0
MHz
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