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| MJE253 Datasheet, PDF (2/6 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor | |||
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MJE253
Rev.F Mar.-2016
æéåæ° / Absolute Maximum Ratings(Ta=25â)
åæ°
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Peak Collector Current
Collector Power Dissipation
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符å·
Symbol
VCBO
VCEO
VEBO
IC(1)
IC(2)
IB
PD
PD(Tc=25â )
Tj
Tstg
DATA SHEET
æ°å¼
Rating
-100
-100
-7.0
-4.0
-8.0
-10
1.5
15
150
-55ï½150
åä½
Unit
V
V
V
A
A
A
W
W
â
â
çµæ§è½åæ° / Electrical Characteristics(Ta=25â)
åæ°
Parameter
Collector to Emitter Breakdown
Voltage
符å·
Symbol
VCEO
Collector Cut-Off Current
ICBO(1)
ICBO(2)
Emitter Cut-Off Current
IEBO
DC Current Gain
hFE(1)
hFE(2)
Collector to Emitter Saturation
Voltage
VCE(sat)(1)
VCE(sat)(2)
Base to Emitter Saturation Voltage VBE(sat)
Base to Emitter On Voltage
VBE(on)
Transition Frequency
fT
Collector Output Capacitance
Cob
æµè¯æ¡ä»¶
Test Conditions
IC=-10mA IB=0
VCB=-100V
VCE=-100V
VEB=-7.0V
VCE=-1.0V
VCE=-1.0V
IC=-500mA
IC=-1.0A
IC=-2.0A
VCE=-1.0V
VCE=-10V
VCB=-10V
IE=0
Tc=125â
IC=0
IC=-200mA
IC=-1.0A
IB=-50mA
IB=-100mA
IB=-200mA
IC=-500mA
IC=-100mA
f=0.1MHz
æå°å¼ å
¸åå¼ æå¤§å¼ åä½
Min Typ Max Unit
-100
V
-0.1 μA
-0.1 mA
-0.1 μA
40
180
15
-0.3 V
-0.6 V
-1.8 V
-1.5 V
40
MHz
50 pF
http://www.fsbrec.com
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