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| MJE172 Datasheet, PDF (2/6 Pages) STMicroelectronics – COMPLEMENTARY SILICON POWER TRANSISTORS | |||
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MJE172
Rev.E Mar.-2016
æéåæ° / Absolute Maximum Ratings(Ta=25â)
åæ°
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Current - Continuous
Base Current - Continuous
Collector Power Dissipation
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符å·
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
PC(Tc=25â )
Tj
Tstg
DATA SHEET
æ°å¼
Rating
-100
-80
-7.0
-3.0
-6.0
-1.0
1.5
12.5
150
-55ï½150
åä½
Unit
V
V
V
A
A
A
W
W
â
â
çµæ§è½åæ° / Electrical Characteristics(Ta=25â)
åæ°
Parameter
Collector to Emitter Breakdown
Voltage
符å·
Symbol
VCEO
Collector Cut-Off Current
ICBO
Emitter Cut-Off Current
IEBO
hFE(1)
DC Current Gain
hFE(2)
hFE(3)
Collector to Emitter Saturation
Voltage
VCE(sat)(1)
VCE(sat)(2)
VCE(sat)(3)
VBE(sat)(1)
Base to Emitter Saturation Voltage
VBE(sat)(2)
Base to Emitter On Voltage
VBE(on)
Transition Frequency
fT
Reverse Transfer Capacitance
Cob
æµè¯æ¡ä»¶
Test Conditions
IC=-10mA IB=0
VCB=-100V
VEB=-7.0V
VCE=-1.0V
VCE=-1.0V
VCE=-1.0V
IC=-500mA
IC=-1.5A
IC=-3.0A
IC=-1.5A
IC=-3.0A
VCE=-1.0V
VCE=-10V
VCB=-10V
IE=0
IC=0
IC=-100mA
IC=-500mA
IC=-1.5A
IB=-50mA
IB=-150mA
IB=-600mA
IB=-150mA
IB=-600mA
IC=-500mA
IC=-100mA
f=0.1MHz
æå°å¼ å
¸åå¼ æå¤§å¼ åä½
Min Typ Max Unit
-80
V
-0.1 μA
-0.1 μA
50
300
30
12
-0.3 V
-0.9 V
-1.7 V
-1.5 V
-2.0 V
-1.2 V
50
MHz
50 pF
http://www.fsbrec.com
2/6
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