MJE15032 Datasheet, PDF (2/6 Pages) Motorola, Inc – 8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 250 VOLTS 50 WATTS

MJE15032
Rev.F Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Base Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
符号
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
P_D
P_D(Tc=25℃ )
T_j
T_stg
R_θJC
R_θJA
DATA SHEET
数值
Rating
250
250
5
8
2
2
50
150
-65～150
2.5
62.5
单位
Unit
V
V
V
A
A
W
W
℃
℃
℃ /W
℃ /W
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Emitter Breakdown
Voltage*
Collector Cut-Off Current
符号
Symbol
*V_CEO
I_CBO
测试条件
Test Conditions
I_C=10mA I_B=0
V_CB=250V I_E=0
最小值 典型值 最大值 单位
Min Typ Max Unit
250
V
10 μA
Emitter Cut-Off Current
I_EBO
V_BE=5V
I_C=0
10 μA
*h_FE(1) V_CE=5V
I_C=1A
50
200
DC Current Gain
*h_FE(2) V_CE=5V
I_C=0.5A
70
Collector to Emitter Saturation
Voltage*
Base to Emitter On Voltage*
Transition Frequency
*h_FE(3) V_CE=5V
I_C=2A
10
*V_CE(sat) I_C=1A
I_B=0.1A
*V_BE(on) V_CE=5V
I_C=1A
f_T
V_CE=10V
f=1MHz
I_C=500mA
30
0.5 V
1
V
MHz
*脉冲测试：脉宽≤300μs，占空比≤2%。*Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%.
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