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MJE13009X9 Datasheet, PDF (2/6 Pages) Foshan Blue Rocket Electronics Co.,Ltd. – Silicon NPN Transistor in a TO-3P Plastic Package
MJE13009X9
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
VCBO
VCEO
VEBO
IC
PC
PC(Tc=25℃ )
Tj
Tstg
DATA SHEET
数值
Rating
700
400
9.0
8.0
2.0
90
150
-55~150
单位
Unit
V
V
V
A
W
W
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
符号
Symbol
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Cut-Off Current
ICBO
Collector cut-off current
ICEO
Emitter Base Cut-Off Current
IEBO
DC Current Gain
Collector to Emitter Saturation
Voltage
hFE
VCE(sat)
Base to Emitter Saturation Voltage VBE(sat)
Transition Frequency
fT
Fall time
tf
Storage time
tS
测试条件
Test Conditions
IC=1mA
IE=0
IC=10mA IB=0
IE=1mA
IC=0
VCB=700V IE=0
VCE=400V IB=0
VEB=9.0V IC=0
VCE=5.0V IC=2.0A
IC=8.0A
IB=2.0A
IC=8.0A
VCE=10V
f=1.0MHz
IB=2.0A
IC=0.5A
VCE=5V
(UI9600)
IC=0.5A
最小值 典型值 最大值 单位
Min Typ Max Unit
700
V
400
V
9
V
0.1 mA
0.1 mA
0.1 mA
10
40
1.5 V
1.5 V
5.0
MHz
0.8 μs
4.0
9.0 μs
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