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| MJE13005DQ5 Datasheet, PDF (2/6 Pages) Foshan Blue Rocket Electronics Co.,Ltd. – Silicon NPN transistor in a TO-126(R) Plastic Package | |||
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MJE13005DQ5
Rev.E Mar.-2016
æéåæ° / Absolute Maximum Ratings(Ta=25â)
åæ°
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符å·
Symbol
VCBO
VCEO
VEBO
IC
PC
PC(TC=25â)
Tj
Tstg
DATA SHEET
æ°å¼
Rating
700
400
9.0
4
1.25
50
150
-55ï½150
åä½
Unit
V
V
V
A
W
W
â
â
çµæ§è½åæ° / Electrical Characteristics(Ta=25â)
åæ°
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
符å·
Symbol
æµè¯æ¡ä»¶
Test Conditions
VCBO IC=1mA
IE=0
VCEO IC=10mA IB=0
Emitter to Base Breakdown Voltage VEBO IE=1mA
IC=0
Collector Cut-Off Current
ICBO VCB=700V IE=0
Collector cut-off current
ICEO VCE=400V IB=0
Emitter Base Cut-Off Current
IEBO VEB=9.0V IC=0
DC Current Gain
Collector to Emitter Saturation
Voltage
hFE(1)
hFE(2)
VCE=5.0V
VCE=5.0V
VCE(sat) IC=2.0A
IC=1.0A
IC=2.0A
IB=0.4A
Base to Emitter Saturation Voltage
Transition Frequency
VBE(sat)
fT
IC=2.0A
VCE=10V
f=1.0MHz
IB=0.4A
IC=0.5A
Fall time
Storage time
tf
VCE=5V
IC=0.5A
tS (UI9600)
æå°å¼ å
¸åå¼ æå¤§å¼ åä½
Min Typ Max Unit
700
V
400
V
9.0
V
0.1 mA
0.1 mA
0.1 mA
10
50
8
40
1.0 V
1.6 V
5.0
MHz
0.8 μs
4.0 μs
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