MJE13003LF5 Datasheet, PDF (2/6 Pages) Foshan Blue Rocket Electronics Co.,Ltd. – Silicon NPN transistor in a TO-126(R) Plastic Package.

MJE13003LF5
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
P_C(T_C=25℃)
T_j
T_stg
DATA SHEET
数值
Rating
400
200
9.0
1.2
1.25
20
150
-55～150
单位
Unit
V
V
V
A
W
W
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
符号
Symbol
测试条件
Test Conditions
V_CBO I_C=1mA
I_E=0
V_CEO I_C=10mA I_B=0
Emitter to Base Breakdown Voltage V_EBO I_E=1mA
I_C=0
Collector Cut-Off Current
I_CBO V_CB=400V I_E=0
Collector cut-off current
I_CEO V_CE=200V I_B=0
Emitter Base Cut-Off Current
I_EBO V_EB=9.0V I_C=0
DC Current Gain
Collector to Emitter Saturation
Voltage
h_FE V_CE=5.0V
V_CE(sat) I_C=1A
I_C=200mA
I_B=250mA
Base to Emitter Saturation Voltage
Transition Frequency
V_BE(sat)
f_T
I_C=1A
V_CE=10V
f=1.0MHz
I_B=250mA
I_C=100mA
Fall time
Storage time
t_f
V_CE=5V
I_C=100mA
t_s ^(UI9600)
最小值 典型值 最大值 单位
Min Typ Max Unit
400
V
200
V
9.0
V
0.1 mA
0.1 mA
0.1 mA
10
40
0.8 V
1.5 V
5.0
MHz
0.6 μs
4.0 μs
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