 English |
|
|
|
|
|
|
|
| MJE13003HN6 Datasheet, PDF (2/6 Pages) Foshan Blue Rocket Electronics Co.,Ltd. – Silicon NPN transistor in a TO-126F(R) Plastic Package. | |||
| |||
| ◁ |
MJE13003HN6
Rev.E Mar.-2016
æéåæ° / Absolute Maximum Ratings(Ta=25â)
åæ°
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符å·
Symbol
VCBO
VCEO
VEBO
IC
PC
PC(Tc=25â)
Tj
Tstg
DATA SHEET
æ°å¼
Rating
1400
800
9.0
1.5
1.25
30
150
-55ï½150
åä½
Unit
V
V
V
A
W
W
â
â
çµæ§è½åæ° / Electrical Characteristics(Ta=25â)
åæ°
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
Emitter to Base Breakdown
Voltage
符å·
Symbol
VCBO
VCEO
VEBO
Collector Cut-Off Current
ICBO
Collector cut-off current
ICEO
Emitter Base Cut-Off Current
IEBO
DC Current Gain
Collector to Emitter Saturation
Voltage
hFE
hFE
VCE(sat)
Base to Emitter Saturation Voltage VBE(sat)
Transition Frequency
fT
Fall time
tf
Storage time
ts
æµè¯æ¡ä»¶
Test Conditions
IC=1mA
IE=0
IC=10mA IB=0
IE=1mA
IC=0
VCB=1400V IE=0
VCE=800V IB=0
VEB=9V
IC=0
VCE=5V
IC=50mA
VCE=5V
IC=1mA
IC=100mA IB=20mA
IC=100mA
VCE=10V
f=1.0MHz
IB=20mA
IC=0.1A
VCE=5V
(UI9600)
IC=0.25A
æå°å¼ å
¸åå¼ æå¤§å¼ åä½
Min Typ Max Unit
1400
V
800
V
9
V
0.1 mA
0.1 mA
0.1 mA
10
40
8
0.6 V
1.5 V
3
MHz
4 μs
6 μs
http://www.fsbrec.com
2/6
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese