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| MJE13003DGT Datasheet, PDF (2/6 Pages) Foshan Blue Rocket Electronics Co.,Ltd. – Silicon NPN transistor in a SOT-89 Plastic Package. | |||
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MJE13003DGT
Rev.E Mar.-2016
æéåæ° / Absolute Maximum Ratings(Ta=25â)
åæ°
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符å·
Symbol
VCBO
VCEO
VEBO
IC
PC(Ta=25â )
Tj
Tsag
DATA SHEET
æ°å¼
Rating
600
400
9.0
1.3
1.0
150
-55ï½150
åä½
Unit
V
V
V
A
W
â
â
çµæ§è½åæ° / Electrical Characteristics(Ta=25â)
åæ°
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Cut-Off Current
Collector cut-off current
Emitter Base Cut-Off Current
DC Current Gain
Collector to Emitter Saturation
Voltage
Base to Emitter Saturation
Voltage
Fall time
Storage time
Transition Frequency
符å·
Symbol
VCBO
VCEO
VEBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)(1)
VCE(sat)(2)
æµè¯æ¡ä»¶
Test Conditions
IC=1mA
IE=0
IC=10mA IB=0
IE=1mA
IC=0
VCB=600V IE=0
VCE=400V IB=0
VEB=9.0V IC=0
VCE=5V
IC=200mA
VCE=5V
IC=1mA
VCE=5V
IC=1.2A
IC=500mA IB=100mA
IC=1.0A
IB=500mA
VBE(sat) IC=500mA IB=100mA
tf
VCE=5V
IC=0.25A
ts
(UI9600)
fT
VCE=10V
f=1MHz
IC=0.1A
æå°å¼ å
¸åå¼ æå¤§å¼ åä½
Min Typ Max Unit
600
V
400
V
9.0
V
0.1 mA
0.1 mA
0.1 mA
10
40
7
5
0.5 V
0.6 V
1.2 V
0.8 μS
3.5 μS
5
MHz
http://www.fsbrec.com
2/6
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