MJD112 Datasheet, PDF (2/6 Pages) Motorola, Inc – SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS

MJD112
Rev.E May.-2016
DATA SHEET
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Current – Continuous(Pulse)
Base Current - Continuous
Collector Power Dissipation
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Pulse Test:PW≤300μs,Duty Cycle≤2%
符号
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_C(Pulse)
I_B
P_C
P_C(T_C=25℃ )
T_j
T_stg
电性能参数 / Electrical Characteristics(Ta=25℃)
数值
Rating
100
100
5.0
2.0
4.0
50
1.75
20
150
-55～150
单位
Unit
V
V
V
A
A
mA
W
W
℃
℃
参数
Parameter
Collector to Emitter Breakdown
Voltage*
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage*
Base-Emitter-On Voltage*
Current Gain Bandwidth Product
Output Capacitance
符号
Symbol
测试条件
Test Conditions
V_CEO* I_C=30mA I_B=0
I_CEO
I_CBO
I_EBO
h_FE(1)*
h_FE(2)*
h_FE(3)*
V_CE(sat)1*
V_CE(sat)2*
V_BE(sat)*
V_BE(on)*
f_T
C_ob
V_CE=50V
V_CB=100V
V_EB=5.0V
V_CE=3.0V
V_CE=3.0V
V_CE=3.0V
I_C=2.0A
I_C=4.0A
I_C=4.0A
V_CE=3.0V
V_CE=10V
V_CB=10V
f=0.1MHz
I_B=0
I_E=0
I_C=0
I_C=2.0A
I_C=0.5A
I_C=4.0A
I_B=8.0mA
I_B=40mA
I_B=40mA
I_C=2.0A
I_C=0.75A
I_E=0
最小值 典型值 最大值 单位
Min Typ Max Unit
100
V
1000
500
200
25
0.02 mA
0.02 mA
2.0 mA
12K
2.0 V
3.0 V
4.0 V
2.8 V
MHz
100 pF
*Pulse Test:Pulse Width≤380us,Duty Cycle≤2%. *脉冲测试：脉宽≤380us,占空比≤2%。
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