MBRJ10150CT Datasheet, PDF (2/6 Pages) Foshan Blue Rocket Electronics Co.,Ltd. – Ultrafast Recovery Diode in a TO-220S Plastic Package

MBRJ10150CT
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
Reverse Voltage
RMS Reverse Voltage
Average Rectified Forward Current
Non Repetitive Peak Surge Current
Thermal Resistance Junction to Case
Junction Temperature Range
Storage Temperature Range
符号
Symbol
V_RRM
V_RWM
V_RM
V_R(RMS)
I_F(AV)
I_FSM
R_θJc
T_{j MAX}
T_stg
DATA SHEET
数值
Rating
150
105
2*5
100
3.5
150
-65～150
单位
Unit
V
V
A
A
℃ /W
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
符号
测试条件
最小值 典型值 最大值 单位
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Reverse Voltage
V_(BR)R I_R=0.3mA
150
V
I_F=5A
T_j=25℃
0.85 V
Forward Voltage
I_F=5A
T_j=125℃
V_F
I_F=10A
T_j=25℃
0.70 V
0.95 V
I_F=10A T_j=125℃
0.75 V
Instantaneous Reverse Current
I_R
（_{Note 1}）
V_R=150V
V_R=120V
V_R=150V
T_j=25℃
T_j=25℃
T_j=125℃
10
uA
1
mA
5
mA
注/Notes：
1. 使用极短的测试时间，以尽量减少自热效应。/Short duration pulse test used to minimize self-heating
effect.
2. 除非特别注明，数值为一个芯片的参数。/ Unless otherwise noted, values for the parameters of a
single chip
http://www.fsbrec.com
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