MBRF10100CT Datasheet, PDF (2/6 Pages) KEC(Korea Electronics) – SCHOTTKY BARRIER TYPE DIODE

MBRF10100CT
Rev.F Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
Peak Reverse Voltage
RMS Reverse current
Average Forward Current
Non Repetitive Peak Surge Current
Thermal Resistance Junction to Case
Junction Temperature Range
Storage Temperature Range
符号
Symbol
V_RRM
V_RWM
V_RM
V_R(RMS)
I_F(AV)
I_FSM
R_θJc
T_{j, MAX}
T_stg
DATA SHEET
数值
Rating
100
70
2×5
125
4
150
-55～150
单位
Unit
V
V
A
A
℃ /W
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Reverse Voltage
Forward Voltage
Instantaneous Reverse Current
符号
测试条件
Symbol Test Conditions
V_R I_R=0.3mA
I_F =5A(T_j=25℃)
I_F =5A(T_j=125℃)
V_F
I_F =10A(T_j=25℃)
I_F =10A(T_j=125℃)
V_R=100V(T_j=25℃)
I_R V_R=70V(T_j=125℃)
V_R=100V(T_j=125℃)
最小值 典型值 最大值
Min Typ Max
100
0.85
0.75
0.95
0.85
10
1.0
5.0
单位
Unit
V
V
V
V
V
uA
mA
mA
注/Notes：
1. 使用极短的测试时间，以尽量减少自热效应。/Short duration pulse test used to minimize self-heating
effect.
2. 除非特别注明，数值为一个芯片的参数。/ Unless otherwise noted, values for the parameters of a
single chip
http://www.fsbrec.com
2/6